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A 130-nm CMOS 95-mm2 1-Gb multilevel AG-AND-type flash memory with 10-MB/s programming throughputKURATA, Hideaki; SAEKI, Shunichi; NARUMI, Shunichi et al.IEICE transactions on electronics. 2006, Vol 89, Num 10, pp 1469-1479, issn 0916-8524, 11 p.Article

Random telegraph signal in flash memory: Its impact on scaling of multilevel flash memory beyond the 90-nm nodeKURATA, Hideaki; OTSUGA, Kazuo; KOTABE, Akira et al.IEEE journal of solid-state circuits. 2007, Vol 42, Num 6, pp 1362-1369, issn 0018-9200, 8 p.Article

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